:? :?:? :?:::?:?:?:?:?:?:?:?:a @?:?:?:?:?::?:?:w:?:?::o:::?:?::?:? @?:?:?:?:?:::?: @?::?:?::?::?:w:?:1::?:?::?:?:w::?:?::?:?: @?:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: @?:::?:w:o:?:?:?::?:::?:?::?:?:w @?:?:::o:::? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:e:?:? ::?:?:? :?:?::? ::?:?:? ::?:?::?::?:w:::?:o:?::?:?:?:?:?:?:?:?:1::?:?:? :? >? :?:?: :? :? :?:? :?:::?:?:?:?:?:?:?:?:a @?:?:?:?:o:?:::o:?:?:w:o:?:?::?:o:?:?::::?::o: :?:?:?:?:?=? ::?::?:?:?:?:?: :a:e:?:1:?:? :?:?:?:?::?::?:? :::?:? :?:e:?:? ::?:?:? :?:?::? :a:?:?:?:?:?:w::?:?:?::?:?:?:?:a :?::?::?:?::?:::o:?:w:1::?:?:a:?:?:?:?:w::?:?:?:?:?:? :?:-:?:: :?:?:?:?:?:?? :w:?:?::w:?:?:?:?:?:?:w::?::::?:?:?:o:?:w::?:?::?:?:? :?:?:?:?:?::?:::?:w::?:?::?:?:?:w:?::?::?:w:?::?:?:?:w:?::?::?:?:?:w:1:e:w:::?:o:?::?:?:w:?:?:?:?:?::?:?:::?:? :w :?:?:?:w:? :? :?:? @?:?:e:?::o:?:?:w:?:?:?:o:?:::o:?:?:w:?:?:?:w:?:?:?::?:?:?:w:o:?:?::?:o:?:?::::?::o: 0 5 10 15 20 25 30 35 40 012345 v ds (volts) fig 1: on-region characteristics id (a) v gs =1.5v 2v 2.5v 4.5v 10 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 v gs (volts) figure 2: transfer characteristics id (a) 5 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage rds(on) (m ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics is (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v v gs =4.5v v gs =2.5v 0 5 10 15 20 25 30 35 40 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage rds(on) (m ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =5a v gs =1.8v v gs =1.8v 25c 125c i d =5a :?:::?:?:?:?:?:?:?:?:a :?::?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?:w ::o:?:?:?:?:?:w:?::?::?:?
:? :?:? 0 1 2 3 4 5 0 4 8 12 16 20 q g (nc) figure 7: gate-charge characteristics vgs (volts) 0 500 1000 1500 2000 2500 3000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient t hermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) id (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =10v i d =8a single pulse d=t on /t t j , pk =t a +p dm .z ja .r ja r ja =83c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s :?:::?:?:?:?:?:?:?:?:a :?::?:?:w::?:o:?:?:?:?:?:?:w::|:a:?:?:?:w ::o:?:?:?:?:?:w:?::?::?:?
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